3rd Physics Institute

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61 to 70 of 528 Results

fig_4.csv Sep 3, 2025 - Replication Data for: "Efficient detection of statistical RF fields with a quantum sensor" Tabular Data - 8.2 MB - 7 Variables, 99990 Observations - UNF:6:OtKZ4RrSzhmoDl+g5fs0bQ==
Fig2b_L.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 79.2 KB - 271 Variables, 60 Observations - UNF:6:6hrxRRBvAx9cQ6woy9U4Jg== Location of used defects in the study using confocal microscopy
Fig2b_R.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 8.2 KB - 19 Variables, 24 Observations - UNF:6:AiaqRITGRJ27Ik64K9W5/g== Depletion zone mapping using PLE linewidths
Fig2c_Bias.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 338.1 KB - 401 Variables, 120 Observations - UNF:6:h6grSmpXPhuQYm0W3YZcbA== PLE measurements of V2 coupled to charge trap and manipulation of its charge state using bias
Fig2c_noRepump.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 67.0 KB - 101 Variables, 60 Observations - UNF:6:GfY6V/aCPAVFcWgjzKWSAA== PLE measurements of V2 coupled to charge trap and manipulation of its charge state using only PLE lasers
Fig2c_Repump.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 31.0 KB - 45 Variables, 60 Observations - UNF:6:w8LUvx6BEKvUwAvQT96yXg== PLE measurements of V2 coupled to charge trap and manipulation of its charge state using cont. repump
Fig2d_inset_down.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 12.5 KB - 131 Variables, 10 Observations - UNF:6:qWHpAXOo2HQVaPNj0XzsWw== PLE measurement using cont. repump
Fig2d_inset_up.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 13.2 KB - 131 Variables, 10 Observations - UNF:6:NRMFyIsBDj24Ez2Hu4ms5A== PLE measurement without using cont. repump
Fig2d.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 762 B - 5 Variables, 10 Observations - UNF:6:oKkrdJDaPRMgRyJqNfvRFg== Time resolved PLE tracking of V2 coupled to charge trap and manipulation of its charge state using various techniques
Fig3a_inset.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 316 B - 4 Variables, 7 Observations - UNF:6:xTvlypUS+J0qkEzPtxlYDA== Slope of PLE ionisation rate for different bias

fig_4.csv

Sep 3, 2025 - Replication Data for: "Efficient detection of statistical RF fields with a quantum sensor"

Tabular Data - 8.2 MB - 7 Variables, 99990 Observations -

Fig2b_L.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 79.2 KB - 271 Variables, 60 Observations -

Location of used defects in the study using confocal microscopy

Fig2b_R.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 8.2 KB - 19 Variables, 24 Observations -

Depletion zone mapping using PLE linewidths

Fig2c_Bias.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 338.1 KB - 401 Variables, 120 Observations -

PLE measurements of V2 coupled to charge trap and manipulation of its charge state using bias

Fig2c_noRepump.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 67.0 KB - 101 Variables, 60 Observations -

PLE measurements of V2 coupled to charge trap and manipulation of its charge state using only PLE lasers

Fig2c_Repump.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 31.0 KB - 45 Variables, 60 Observations -

PLE measurements of V2 coupled to charge trap and manipulation of its charge state using cont. repump

Fig2d_inset_down.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 12.5 KB - 131 Variables, 10 Observations -

PLE measurement using cont. repump

Fig2d_inset_up.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 13.2 KB - 131 Variables, 10 Observations -

PLE measurement without using cont. repump

Fig2d.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 762 B - 5 Variables, 10 Observations -

Time resolved PLE tracking of V2 coupled to charge trap and manipulation of its charge state using various techniques

Fig3a_inset.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 316 B - 4 Variables, 7 Observations -

Slope of PLE ionisation rate for different bias

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