3rd Physics Institute

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51 to 60 of 482 Results

Fig4d.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 5.0 KB - 5 Variables, 105 Observations - UNF:6:0DuuGAarW9dMi2WrzAHW6A== SSR historgam
Fig4e_hist.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 1.0 KB - 3 Variables, 40 Observations - UNF:6:Ww4RojZLyUJVKAb5fPjIdQ== Threshold identification; histogram
Fig4e_lines.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 76.5 KB - 7 Variables, 1000 Observations - UNF:6:jFNTZ1JIPizZtuMXXMCU1w== Threshold identification; lines
FigS1a.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 777 B - 5 Variables, 36 Observations - UNF:6:pZ0potAsA9qpdbDQsg0w4w== U-I-curve in bulk also with negative bias
FigS1b.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 4.9 MB - 1001 Variables, 1000 Observations - UNF:6:re2z2V2yEFL3S3ptiO7Dew== Full confocal map showing area of depletion zone statistics, WG's and location of defect-1 & defect-2
FigS1c.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 350.3 KB - 625 Variables, 141 Observations - UNF:6:QTVpsy/iBiqiwKSm5dk5rw== Stark tuning of PLE in WG
FigS1d.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 126.4 KB - 10 Variables, 1250 Observations - UNF:6:ht84M7nc62GzKf7DyW8WMQ== Comparision of PLE in bulk, depletion zone and WG
FigS2a.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 1.3 MB - 301 Variables, 1020 Observations - UNF:6:9nEU/dSzOf5mAY7kbgBMqA==
FigS2b.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 57.5 KB - 4 Variables, 1000 Observations - UNF:6:Zo6K4GDXPUdd8T6CrNV3Mg== PLE power broadening for +7V and -20V bias
FigS2c_add.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 1.1 MB - 7 Variables, 9726 Observations - UNF:6:rx3VKMIzXDFM1ud4K+zMFQ== Simulated depletion zone for different initial epi dopings

Fig4d.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 5.0 KB - 5 Variables, 105 Observations -

SSR historgam

Fig4e_hist.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 1.0 KB - 3 Variables, 40 Observations -

Threshold identification; histogram

Fig4e_lines.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 76.5 KB - 7 Variables, 1000 Observations -

Threshold identification; lines

FigS1a.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 777 B - 5 Variables, 36 Observations -

U-I-curve in bulk also with negative bias

FigS1b.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 4.9 MB - 1001 Variables, 1000 Observations -

Full confocal map showing area of depletion zone statistics, WG's and location of defect-1 & defect-2

FigS1c.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 350.3 KB - 625 Variables, 141 Observations -

Stark tuning of PLE in WG

FigS1d.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 126.4 KB - 10 Variables, 1250 Observations -

Comparision of PLE in bulk, depletion zone and WG

FigS2a.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 1.3 MB - 301 Variables, 1020 Observations -

FigS2b.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 57.5 KB - 4 Variables, 1000 Observations -

PLE power broadening for +7V and -20V bias

FigS2c_add.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 1.1 MB - 7 Variables, 9726 Observations -

Simulated depletion zone for different initial epi dopings

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