3rd Physics Institute

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31 to 40 of 454 Results

FigS2b.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 57.5 KB - 4 Variables, 1000 Observations - UNF:6:Zo6K4GDXPUdd8T6CrNV3Mg== PLE power broadening for +7V and -20V bias
FigS2c_add.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 1.1 MB - 7 Variables, 9726 Observations - UNF:6:rx3VKMIzXDFM1ud4K+zMFQ== Simulated depletion zone for different initial epi dopings
FigS2c.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 8.2 KB - 19 Variables, 24 Observations - UNF:6:AiaqRITGRJ27Ik64K9W5/g== Depletion zone mapping using PLE linewidth of V2's
FigS2d_add.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 1.1 MB - 7 Variables, 9967 Observations - UNF:6:45O0IDIRRbPgt19NtTdnOA== Simulated depletion zone for different emitter depths
FigS2d.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 8.2 KB - 19 Variables, 24 Observations - UNF:6:AiaqRITGRJ27Ik64K9W5/g== Depletion zone mapping using PLE linewidth of V2's
FigS2e1.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 113.4 MB - 3001 Variables, 3000 Observations - UNF:6:ZWM1VjUpq0HgTcUt/oUTVw==
FigS2e2.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 107.5 MB - 3001 Variables, 3000 Observations - UNF:6:65dZxdvU5NjT6WLykzq/iA==
FigS2e3.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 109.2 MB - 3001 Variables, 3000 Observations - UNF:6:YFwamy6QKFUJADmrr8IwNA==
FigS2e4.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 106.5 MB - 3001 Variables, 3000 Observations - UNF:6:HEb/EaI09W5o1Zu1ts6Egw==
FigS3_LC.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 18.4 MB - 1001 Variables, 1000 Observations - UNF:6:FAy6CHLpP3lnBG4lflk/jQ== Confocal difference of 0V and +25V

FigS2b.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 57.5 KB - 4 Variables, 1000 Observations -

PLE power broadening for +7V and -20V bias

FigS2c_add.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 1.1 MB - 7 Variables, 9726 Observations -

Simulated depletion zone for different initial epi dopings

FigS2c.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 8.2 KB - 19 Variables, 24 Observations -

Depletion zone mapping using PLE linewidth of V2's

FigS2d_add.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 1.1 MB - 7 Variables, 9967 Observations -

Simulated depletion zone for different emitter depths

FigS2d.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 8.2 KB - 19 Variables, 24 Observations -

Depletion zone mapping using PLE linewidth of V2's

FigS2e1.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 113.4 MB - 3001 Variables, 3000 Observations -

FigS2e2.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 107.5 MB - 3001 Variables, 3000 Observations -

FigS2e3.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 109.2 MB - 3001 Variables, 3000 Observations -

FigS2e4.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 106.5 MB - 3001 Variables, 3000 Observations -

FigS3_LC.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 18.4 MB - 1001 Variables, 1000 Observations -

Confocal difference of 0V and +25V

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