3rd Physics Institute

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11 to 20 of 454 Results

Fig2c_noRepump.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 67.0 KB - 101 Variables, 60 Observations - UNF:6:GfY6V/aCPAVFcWgjzKWSAA== PLE measurements of V2 coupled to charge trap and manipulation of its charge state using only PLE lasers
Fig2c_Repump.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 31.0 KB - 45 Variables, 60 Observations - UNF:6:w8LUvx6BEKvUwAvQT96yXg== PLE measurements of V2 coupled to charge trap and manipulation of its charge state using cont. repump
Fig2d_inset_down.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 12.5 KB - 131 Variables, 10 Observations - UNF:6:qWHpAXOo2HQVaPNj0XzsWw== PLE measurement using cont. repump
Fig2d_inset_up.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 13.2 KB - 131 Variables, 10 Observations - UNF:6:NRMFyIsBDj24Ez2Hu4ms5A== PLE measurement without using cont. repump
Fig2d.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 762 B - 5 Variables, 10 Observations - UNF:6:oKkrdJDaPRMgRyJqNfvRFg== Time resolved PLE tracking of V2 coupled to charge trap and manipulation of its charge state using various techniques
Fig3a_inset.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 316 B - 4 Variables, 7 Observations - UNF:6:xTvlypUS+J0qkEzPtxlYDA== Slope of PLE ionisation rate for different bias
Fig3a.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 341 B - 4 Variables, 8 Observations - UNF:6:5AsUk77raAc8Qdi8u8HQhw== PLE ionisation rate
Fig3b_inset.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 470 B - 5 Variables, 7 Observations - UNF:6:NEZ+vbQaeY/z6OPy9GhNAw== Two-colour ionisation rate example for 800 nm, inlcuding STD errors
Fig3b.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 5.8 KB - 6 Variables, 100 Observations - UNF:6:C6Nggrcr+wFYMdMZpDbelQ== Two-colour ionisation rate for different wavelengths, inlcuding STD errors
Fig3d.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 1.9 MB - 3 Variables, 55793 Observations - UNF:6:IRCNK4MP+AYO/cvoKvnBHg== Photo ionisation rate calculated by theory

Fig2c_noRepump.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 67.0 KB - 101 Variables, 60 Observations -

PLE measurements of V2 coupled to charge trap and manipulation of its charge state using only PLE lasers

Fig2c_Repump.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 31.0 KB - 45 Variables, 60 Observations -

PLE measurements of V2 coupled to charge trap and manipulation of its charge state using cont. repump

Fig2d_inset_down.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 12.5 KB - 131 Variables, 10 Observations -

PLE measurement using cont. repump

Fig2d_inset_up.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 13.2 KB - 131 Variables, 10 Observations -

PLE measurement without using cont. repump

Fig2d.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 762 B - 5 Variables, 10 Observations -

Time resolved PLE tracking of V2 coupled to charge trap and manipulation of its charge state using various techniques

Fig3a_inset.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 316 B - 4 Variables, 7 Observations -

Slope of PLE ionisation rate for different bias

Fig3a.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 341 B - 4 Variables, 8 Observations -

PLE ionisation rate

Fig3b_inset.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 470 B - 5 Variables, 7 Observations -

Two-colour ionisation rate example for 800 nm, inlcuding STD errors

Fig3b.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 5.8 KB - 6 Variables, 100 Observations -

Two-colour ionisation rate for different wavelengths, inlcuding STD errors

Fig3d.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 1.9 MB - 3 Variables, 55793 Observations -

Photo ionisation rate calculated by theory

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