3rd Physics Institute

Featured Dataverses

In order to use this feature you must have at least one published or linked dataverse.

Publish Dataverse

Are you sure you want to publish your dataverse? Once you do so it must remain published.

Publish Dataverse

This dataverse cannot be published because the dataverse it is in has not been published.

Delete Dataverse

Are you sure you want to delete your dataverse? You cannot undelete this dataverse.

111 to 120 of 510 Results

Fig1d.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 4.1 KB - 19 Variables, 51 Observations - UNF:6:MA3md4IQPHT94B/YopsKsA== U-I-curves of the Schottky diode for various temperatures
Fig1e.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 2.5 MB - 501 Variables, 1000 Observations - UNF:6:Z2LH0G89d/dqIBdR4HcVmQ== Basic confocal map showing the measurement conditions
Fig2a_inset.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 21.7 KB - 5 Variables, 300 Observations - UNF:6:5OMslUfMTsGRfLYwv6TLMg== Exemplary PLE measurements for +20V and -150V
Fig2a.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 2.2 KB - 6 Variables, 35 Observations - UNF:6:i0qvh3Lsjkmm6aGFhKtroA== PLE stark tuning and linewidth narrowing
Fig2b_add.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 474.7 KB - 5 Variables, 9577 Observations - UNF:6:UTSp0x65MbBvWRK/J9aQIw== Position of markers and simulated depletion zone edge
Fig2b_inset.tsv May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 107.5 MB - 3001 Variables, 3000 Observations - UNF:6:65dZxdvU5NjT6WLykzq/iA== Simulation of the depletion zone
Fig2f_extraordinary.csv Mar 6, 2025 - Replication Data for "Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity" Tabular Data - 5.3 MB - 501 Variables, 500 Observations - UNF:6:V/TLHrcGYcesU+0HFezpLg==
Fig2f_ordinary.csv Mar 6, 2025 - Replication Data for "Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity" Tabular Data - 5.4 MB - 501 Variables, 500 Observations - UNF:6:qpodRy8GGs4WOHCbPpRrdw==
Fig2g_extraordinary.csv Mar 6, 2025 - Replication Data for "Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity" Tabular Data - 5.3 MB - 501 Variables, 500 Observations - UNF:6:mOT9rqof7GS70TTIh4F5Ow==
Fig2g_ordinary.csv Mar 6, 2025 - Replication Data for "Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity" Tabular Data - 5.4 MB - 501 Variables, 500 Observations - UNF:6:8BtYQwx9p/tDHkxQL2tl/Q==

Fig1d.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 4.1 KB - 19 Variables, 51 Observations -

U-I-curves of the Schottky diode for various temperatures

Fig1e.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 2.5 MB - 501 Variables, 1000 Observations -

Basic confocal map showing the measurement conditions

Fig2a_inset.tsv

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 21.7 KB - 5 Variables, 300 Observations -

Exemplary PLE measurements for +20V and -150V