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Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
May 21, 2025
Steidl, Timo, 2025, "Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'", https://doi.org/10.18419/DARUS-4810, DaRUS, V1, UNF:6:a/aFEHOEdT2cqMGvUFzD7g== [fileUNF]
Tabular style data sets to reproduce all plots in the paper. The datasets are either 1D plots with the x-values in the first column and all plotted y-curves in the following columns or pairwise if stated such. For 2D plots, the data consists of a vector containing the values of the x- and y-axis (first row and column, respectively) as well as the 2...
Fig1c.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 16.5 KB - 4 Variables, 300 Observations - UNF:6:3g0IYxEYdso96QWXRqEghQ==
Exemplary PLE measurement in bulk
Fig1d.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 4.1 KB - 19 Variables, 51 Observations - UNF:6:MA3md4IQPHT94B/YopsKsA==
U-I-curves of the Schottky diode for various temperatures
Fig1e.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 2.5 MB - 501 Variables, 1000 Observations - UNF:6:Z2LH0G89d/dqIBdR4HcVmQ==
Basic confocal map showing the measurement conditions
Fig2a_inset.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 21.7 KB - 5 Variables, 300 Observations - UNF:6:5OMslUfMTsGRfLYwv6TLMg==
Exemplary PLE measurements for +20V and -150V
Fig2a.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 2.2 KB - 6 Variables, 35 Observations - UNF:6:i0qvh3Lsjkmm6aGFhKtroA==
PLE stark tuning and linewidth narrowing
Fig2b_add.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 474.7 KB - 5 Variables, 9577 Observations - UNF:6:UTSp0x65MbBvWRK/J9aQIw==
Position of markers and simulated depletion zone edge
Fig2b_inset.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 107.5 MB - 3001 Variables, 3000 Observations - UNF:6:65dZxdvU5NjT6WLykzq/iA==
Simulation of the depletion zone
Fig2b_L.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 79.2 KB - 271 Variables, 60 Observations - UNF:6:6hrxRRBvAx9cQ6woy9U4Jg==
Location of used defects in the study using confocal microscopy
Fig2b_R.tab
May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'
Tabular Data - 8.2 KB - 19 Variables, 24 Observations - UNF:6:AiaqRITGRJ27Ik64K9W5/g==
Depletion zone mapping using PLE linewidths
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