3rd Physics Institute

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1 to 10 of 454 Results

Fig1c.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 16.5 KB - 4 Variables, 300 Observations - UNF:6:3g0IYxEYdso96QWXRqEghQ== Exemplary PLE measurement in bulk
Fig1d.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 4.1 KB - 19 Variables, 51 Observations - UNF:6:MA3md4IQPHT94B/YopsKsA== U-I-curves of the Schottky diode for various temperatures
Fig1e.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 2.5 MB - 501 Variables, 1000 Observations - UNF:6:Z2LH0G89d/dqIBdR4HcVmQ== Basic confocal map showing the measurement conditions
Fig2a_inset.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 21.7 KB - 5 Variables, 300 Observations - UNF:6:5OMslUfMTsGRfLYwv6TLMg== Exemplary PLE measurements for +20V and -150V
Fig2a.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 2.2 KB - 6 Variables, 35 Observations - UNF:6:i0qvh3Lsjkmm6aGFhKtroA== PLE stark tuning and linewidth narrowing
Fig2b_add.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 474.7 KB - 5 Variables, 9577 Observations - UNF:6:UTSp0x65MbBvWRK/J9aQIw== Position of markers and simulated depletion zone edge
Fig2b_inset.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 107.5 MB - 3001 Variables, 3000 Observations - UNF:6:65dZxdvU5NjT6WLykzq/iA== Simulation of the depletion zone
Fig2b_L.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 79.2 KB - 271 Variables, 60 Observations - UNF:6:6hrxRRBvAx9cQ6woy9U4Jg== Location of used defects in the study using confocal microscopy
Fig2b_R.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 8.2 KB - 19 Variables, 24 Observations - UNF:6:AiaqRITGRJ27Ik64K9W5/g== Depletion zone mapping using PLE linewidths
Fig2c_Bias.tab May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature' Tabular Data - 338.1 KB - 401 Variables, 120 Observations - UNF:6:h6grSmpXPhuQYm0W3YZcbA== PLE measurements of V2 coupled to charge trap and manipulation of its charge state using bias

Fig1c.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 16.5 KB - 4 Variables, 300 Observations -

Exemplary PLE measurement in bulk

Fig1d.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 4.1 KB - 19 Variables, 51 Observations -

U-I-curves of the Schottky diode for various temperatures

Fig1e.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 2.5 MB - 501 Variables, 1000 Observations -

Basic confocal map showing the measurement conditions

Fig2a_inset.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 21.7 KB - 5 Variables, 300 Observations -

Exemplary PLE measurements for +20V and -150V

Fig2a.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 2.2 KB - 6 Variables, 35 Observations -

PLE stark tuning and linewidth narrowing

Fig2b_add.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 474.7 KB - 5 Variables, 9577 Observations -

Position of markers and simulated depletion zone edge

Fig2b_inset.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 107.5 MB - 3001 Variables, 3000 Observations -

Simulation of the depletion zone

Fig2b_L.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 79.2 KB - 271 Variables, 60 Observations -

Location of used defects in the study using confocal microscopy

Fig2b_R.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 8.2 KB - 19 Variables, 24 Observations -

Depletion zone mapping using PLE linewidths

Fig2c_Bias.tab

May 21, 2025 - Replication Data for: 'Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature'

Tabular Data - 338.1 KB - 401 Variables, 120 Observations -

PLE measurements of V2 coupled to charge trap and manipulation of its charge state using bias

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