Replication Data for: Scalable production of solid-immersion lenses for quantum emitters in silicon carbide (doi:10.18419/darus-2083)

View:

Part 1: Document Description
Part 2: Study Description
Part 3: Data Files Description
Part 4: Variable Description
Part 5: Other Study-Related Materials
Entire Codebook

Replication Data for: Scalable production of solid-immersion lenses for quantum emitters in silicon carbide

doi:10.18419/darus-2083

DaRUS

2021-11-15

1

Sardi, Fiammetta, 2021, "Replication Data for: Scalable production of solid-immersion lenses for quantum emitters in silicon carbide", https://doi.org/10.18419/darus-2083, DaRUS, V1, UNF:6:WT2hLsr015Q+Y9l/lrLoDA== [fileUNF]

Replication Data for: Scalable production of solid-immersion lenses for quantum emitters in silicon carbide

doi:10.18419/darus-2083

Sardi, Fiammetta (Universität Stuttgart)

KO4999/3-1

eu-repo/grantAgreement/EC/H2020/742610

eu-repo/grantAgreement/EC/H2020/820445

eu-repo/grantAgreement/EC/H2020/820391

DaRUS

Kolesov, Roman

Kaiser, Florian

2021-07-21

https://doi.org/10.18419/darus-2083

Physics, Solid Immersion Lens, SiC, Silicon Carbide, Enhancement, Vsi, Etching, Plasma Etching, HBr, Hydrogen Bromide, Cl, Chlorine

<p>Data to replicate the experimental data plots in the paper:</p> Fig. 1d, e: AFM scans of SIL before the etching and after the etching, possibility to see how the mask changed in the etching process;<br> Fig. 2a, b, c: Confoscal scan of the all SIL, g2 measurements of one defect inside the sils and relative ODMR measurements related to Vsi in SiC in the SIL;<br> Fig. 3a, b: statistics of centers inside the sils according to the enhancement, maximum enhancement reached for one center inside the SIL compared to the one outside

F. Sardi, T. Kornher, M. Widmann, et al.. Scalable production of solid-immersion lenses for quantum emitters in silicon carbide. Appl. Phys. Lett. 117, 022105 (2020).

10.1063/5.0011366

F. Sardi, T. Kornher, M. Widmann, et al.. Scalable production of solid-immersion lenses for quantum emitters in silicon carbide. Appl. Phys. Lett. 117, 022105 (2020).

• Number of cases: 1000

• No. of variables per record: 4

• Type of File: text/tab-separated-values

UNF:6:tvdi1JU3f1T4rWOQUG9Ivw==

• Number of cases: 48

• No. of variables per record: 1

• Type of File: text/tab-separated-values

UNF:6:EGQmOwpQaJcA0aWJAxhxrQ==

• Index - Index
• Interval - Interval
• Time[ps] -  Time[ps]
• g2(t) -  g2(t)
• 2,32075471698113 - 2,32075471698113

f68714 Location:

Summary Statistics: Valid 1000.0; Mean 499.5; Min. 0.0; Max. 999.0; StDev 288.8194360957494;

Variable Format: numeric

Notes: UNF:6:9/V5rT/9R8VP66r7LazxCA==

f68714 Location:

Summary Statistics: StDev 0.0; Mean 254.0; Max. 254.0; Min. 254.0; Valid 1000.0

Variable Format: numeric

Notes: UNF:6:t/uh9qTjNIIkS0gIBvacrw==

f68714 Location:

Summary Statistics: Mean -100.0; Max. 99800.0; Valid 1000.0; Min. -100000.0; StDev 57763.887219149874

Variable Format: numeric

Notes: UNF:6:rD3LGA5XI8mm6YRyk0nsIg==

f68714 Location:

Summary Statistics: Max. 1.4729831; StDev 0.12374639448769206; Min. 0.49399695; Mean 1.1326940682; Valid 1000.0;

Variable Format: numeric

Notes: UNF:6:XkZaiwIeshNpRCNTNkkbjg==

f65274 Location:

Variable Format: character

Notes: UNF:6:EGQmOwpQaJcA0aWJAxhxrQ==

Label:

Fig_1d_AFM_Pfrofile_AZ_resist_before etching.dat

Text:

Fig. 1d, AFM profile before etching

text/x-fixed-field

Label:

Fig_1e_AFM_Profile_After etching.dat

Text:

Fig. 1e, AFM profile after etching

text/x-fixed-field

Label:

Fig_2a_PL_Scan_SIL_1version.txt

Text:

Fig. 2a PLE scan on one SIL

text/plain

Label:

Fig_2c_odmr.dat

Text:

Fig. 2c, ODMR

text/x-fixed-field

Label:

Fig_3b_Saturation_curve.dat

Text:

Fig. 3b, Count rate saturation with and without SIL

text/x-fixed-field